[1]张明朝,陈卫东*,李 玲.纳米Cu/SiO2薄膜制备及其性能[J].四川师范大学学报(自然科学版),2020,43(04):521-527.[doi:10.3969/j.issn.1001-8395.2020.04.016]
 ZHANG Mingchao,CHEN Weidong,LI Ling.Preparation and Properties of Cu/SiO2 Thin Films[J].Journal of SichuanNormal University,2020,43(04):521-527.[doi:10.3969/j.issn.1001-8395.2020.04.016]
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纳米Cu/SiO2薄膜制备及其性能()
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《四川师范大学学报(自然科学版)》[ISSN:1001-8395/CN:51-1295/N]

卷:
43卷
期数:
2020年04期
页码:
521-527
栏目:
基础理论
出版日期:
2020-06-20

文章信息/Info

Title:
Preparation and Properties of Cu/SiO2 Thin Films
文章编号:
1001-8395(2020)04-0521-07
作者:
张明朝 陈卫东* 李 玲
四川师范大学 物理与电子工程学院, 四川 成都 610101
Author(s):
ZHANG Mingchao CHEN Weidong LI Ling
College of Physics & Electronic Engineering, Sichuan Normal University, Chengdu 610101, Sichuan
关键词:
Cu薄膜阵列 方均根粗糙度 退火温度 透射率
Keywords:
Cu thin film array root mean square roughness annealing temperature transmittance
分类号:
TG156
DOI:
10.3969/j.issn.1001-8395.2020.04.016
文献标志码:
A
摘要:
采用热蒸发在载玻片和SiO2衬底上沉积约5.12 nm的Cu薄膜,再用退火炉分别进行100、200、300、400和500 ℃等5个温度退火,得到不同温度下的纳米Cu薄膜.用原子力显微镜和紫外-可见分光光度计研究不同退火温度对纳米Cu薄膜表面形貌、粒子分布和光学性质的影响.实验结果表明:当纳米Cu薄膜在载玻片上生长Cu颗粒阵列时,需要将退火温度控制在200 ℃左右; 若使纳米Cu薄膜在SiO2薄膜表面也能生长Cu颗粒阵列,退火温度比没有沉积SiO2薄膜的衬底高100 ℃,此时纳米Cu颗粒对应方均根粗糙度为7.20 nm、峰高(Skewness)为1.75,以及偏态(Kurtosis)为5.67,仅透射率略低9%.这样的Cu颗粒阵列更利于做超结构薄膜与完美吸收的顶层纳米金属颗粒.当退火温度为500 ℃时,载玻片上生长Cu薄膜的透射率出现一个相对稳定的波段,该工艺条件制备出来的纳米Cu薄膜,可以用来制作一些微型芯片,而SiO2薄膜表面生长使纳米Cu薄膜对应方均根粗糙度为6.25 nm、峰高为0.57,以及偏态为2.66.这样的Cu颗粒阵列不仅能够做大频率光电波吸收,还可以用作全固态电池中电解质上层的导电层.
Abstract:
In this paper, the fixed thickness 5.12 nm of all the Cu thin films were fabricated on glass slides and SiO2 substrates by using thermal evaporation method, then annealed at 100, 200, 300, 400 and 500 ℃, respectively. The effect of the annealing temperature on the surface morphology, conductivity and crystal structure of Cu thin films was successively investigated by AFM(atomic force microscopy)and UV-Vis spectrophotometry. The experimental results indicate that the annealing temperature needs to be controlled to about 200 ℃ when the NPA(nanoscale particle array)of Cu thin films are grown on the slide glass. If the NPA of Cu thin films can also be grown on the surface of the SiO2 film, the annealing temperature is 100 ℃ higher than the sample that the sample substrate without SiO2 film deposited. At this time, the NCP(nano copper particles)have a RMS(root mean square)surface roughness of 7.20 nm, a Skewness of 1.75 and a Kurtosis of 5.67. The transmittance alone is slightly lower by 9%. Such a NPA is more conducive to superstructure thin films and perfectly absorbing top layer NMP(nano metal particles). The transmittance of the Cu film grown on the slide glass appears a relatively stable wavelength band, when the annealing temperature is 500 ℃. The NCF(nano copper film)prepared by the process conditions can be used to make some microchips. The surface growth of SiO2 film made the NCF with a RMS of 6.25 nm, a Skewness of 0.57, and a Kurtosis of 2.66. Such a NPA can not only absorb light waves at large frequencies, but also can be used as electrolyte upper layers in all-solid-state batteries of the conductive layer.

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备注/Memo

备注/Memo:
收稿日期:2018-04-19 接受日期:2019-01-28
基金项目:四川省教育厅重点项目(16ZA0047)
*通信作者简介:陈卫东(1954—),男,教授,主要从事纳米复合薄膜材料的研究,E-mail:cwd_ck@163.com
更新日期/Last Update: 2020-06-20